BD249C

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER BD249 VCEO Collector-emitter voltage BD249A BD249B BD249C BD249 VCBO Collector-base voltage BD249A BD249B BD249C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open base CONDITIONS VALUE 45 60 80 100 55 70 90 115 5 25 40 5 125 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakdown voltage BD249A IC=30mA ;IB=0 BD249B BD249C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain BD249/249A BD249B/249C IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A ; VCE=4V VCE=30V; IB=0 1 VCE=60V; IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=15A ; VCE=4V IC=25A ; VCE=4V 25 10 5 1 mA mA 80 100 1.8 4 2 4 V V V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL V(BR)CEO ICEO IEBO hFE-1 hFE-2 hFE-3 Switching times ton toff Turn-on time Turn-off time IC=1A; IB1=-IB2=0.5A RL=5A 0.3 0.9 µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD249/A/B/C Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3