BD318

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD318 DESCRIPTION ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD317 APPLICATIONS ·Designed for high power amplifiers PINNING (See Fig.2) PIN DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol 1 2 3 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -16 -20 -5 200 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD318 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.2A ; IB=0 IC=-8A ;IB=-0.8A IC=-8A ;IB=-0.8A IC=-8A ;VCE=-2.0V VCB=100V;IE=0 VEB=-7V; IC=0 IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-1A ; VCE=-20V,f=0.2MHz 25 15 1 MHz MIN -100 -1.0 -1.8 -1.5 -1.0 -1.0 TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) VCEsat VBEsat VBE(on) ICBO IEBO hFE-1 hFE-2 fT 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD318 Fig.2 Outline dimensions 3