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BD439

BD439

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BD439 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BD439 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD439 BD441 DESCRIPTION ·With TO-126 package ·Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD439 VCBO Collector-base voltage BD441 BD439 VCEO Collector-emitter voltage BD441 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 4 7 1 36 150 -65~150 V A A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector-emitter sustaining voltage BD439 IC=0.1A; IB=0 BD441 BD439 ICBO Collector cut-off current BD441 BD439 ICES Collector cut-off current BD441 IEBO Emitter cut-off current BD439 hFE-1 DC current gain BD441 hFE-2 DC current gain BD439 hFE-3 DC current gain BD441 fT Transition frequency IC=250mA; VCE=1V IC=2A ; VCE=1V IC=0.5A ; VCE=1V IC=10mA ; VCE=5V VCE=80V; VBE=0 VEB=5V; IC=0 VCB=80V; IE=0 VCE=60V; VBE=0 VCB=60V; IE=0 CONDITIONS IC=2A; IB=0.2A IC=10mA ; VCE=5V IC=2A ; VCE=1V SYMBOL VCEsat VBE-1 VBE-2 BD439 BD441 MIN TYP. MAX 0.8 UNIT V V 0.58 1.5 60 V VCEO(SUS) V 80 100 µA 100 µA 1 20 130 15 40 25 15 3 140 mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD439 BD441 Fig.2 Outline dimensions 3
BD439
1. 物料型号: - BD439 - BD441

2. 器件简介: - 这两种型号的晶体管是SavantIC Semiconductor生产的硅NPN功率晶体管,采用TO-126封装,是BD440和BD442的补充型号。

3. 引脚分配: - PIN 1: Emitter(发射极) - PIN 2: Collector; connected to mounting base(集电极;连接到安装底座) - PIN 3: Base(基极)

4. 参数特性: - VcBO(集电极-基极电压):BD439为60V,BD441为80V - VCEO(集电极-发射极电压):BD439为60V,BD441为80V - VEBO(发射极-基极电压):5V - Ic(集电极电流(DC)):4A - ICM(集电极电流-峰值):7A - 1B(基极电流):1A - Pc(集电极功率耗散):36W(在Tc=25°C时) - Tj(结温):150°C - Tstg(储存温度):-65~150°C

5. 功能详解: - 这些晶体管适用于中等功率的线性和开关应用。 - 具有特定的饱和电压VCEsat、基极-发射极导通电压VBE、集电极-发射极维持电压VCEO(SUS)、集电极截止电流IcBO、发射极截止电流EBO和直流电流增益hFE。

6. 应用信息: - 适用于中等功率的线性和开关应用。

7. 封装信息: - 封装类型为TO-126,文档中提供了简化外形图和符号(Fig.1)以及外形尺寸图(Fig.2)。
BD439 价格&库存

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