BD679

SavantIC Semiconductor Product Specification Silicon NPN Darligton Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type BD676/678/680 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general–purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD675/BD677/BD679 Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD675 VCBO Collector-base voltage BD677 BD679 BD675 VCEO Collector-emitter voltage BD677 BD679 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 45 60 80 5 4 7 0.1 40 150 -55~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 3.12 UNIT K/W K/W SavantIC Semiconductor Product Specification Silicon NPN Darligton Power Transistors BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD675 V(BR)CEO Collector-emitter breakdown voltage BD677 BD679 BD675 V(BR)CBO Collector-base breakdown voltage BD677 BD679 V(BR)EBO VCEsat VBE(on) ICBO ICEO IEBO hFE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IE=5mA; IC=0 IC=1.5A; IB=30mA IC=1.5A ; VCE=3V VCB=rated BVCBO; IE=0 Ta=100 VCE=1/2rated BVCEO; IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=3V 750 IC=1mA; IE=0 IC=100mA; IB=0 CONDITIONS MIN 45 60 80 45 60 80 5 2.5 2.5 0.2 2.0 0.5 5.0 V V V mA mA mA V V TYP. MAX UNIT SYMBOL 2 SavantIC Semiconductor Product Specification Silicon NPN Darligton Power Transistors PACKAGE OUTLINE BD675/BD677/BD679 Fig.2 Outline dimensions 3