BD679A

BD679A

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BD679A - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BD679A 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD675A/677A/679A/681 DESCRIPTION ·With TO-126 package ·Complement to type BD676A/678A/680A/682 ·DARLINGTON APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD675A VCBO Collector-base voltage BD677A BD679A BD681 BD675A VCEO Collector-emitter voltage BD677A BD679A BD681 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 45 60 80 100 5 4 6 0.1 40 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD675A Collector-emitter sustaining voltage BD677A IC=50mA; IB=0 BD679A BD681 Collector-emitter saturation voltage BD675A/677A/679A BD681 BD675A/677A/679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 IEBO Emitter cut-off current BD675A/677A/679A hFE DC current gain BD681 SYMBOL BD675A/677A/679A/681 CONDITIONS MIN 45 60 TYP. MAX UNIT VCEO(SUS) V 80 100 IC=2A; IB=40mA IC=1.5A; IB=30mA IC=2A ; VCE=3V IC=1.5A ; VCE=3V VCB=45V; IE=0 VCB=60V; IE=0 2.8 V 2.5 2.5 V 2.5 VCEsat VBE(ON) Base-emitter voltage ICBO 0.2 VCB=80V; IE=0 VCB=100V; IE=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.5 VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IC=1.5A ; VCE=3V 750 750 2 mA ICEO mA mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD675A/677A/679A/681 Fig.2 Outline dimensions 3
BD679A
1. 物料型号: - BD675A - BD677A - BD679A - BD681

2. 器件简介: - 这些是SavantIC Semiconductor生产的硅NPN功率晶体管,采用TO-126封装,适用于达林顿应用以及中功率线性和开关应用。

3. 引脚分配: - 1号引脚:发射极(Emitter) - 2号引脚:集电极,连接到安装底座(Collector; connected to mounting base) - 3号引脚:基极(Base)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):BD675A为45V,BD677A为60V,BD679A为80V,BD681为100V。 - VCEO(集电极-发射极电压):BD675A为45V,BD677A为60V,BD679A为80V,BD681为100V。 - VEBO(发射极-基极电压):5V。 - Ic(集电极电流):4A。 - ICM(集电极峰值电流):6A。 - IB(基极电流):0.1A。 - Pc(集电极功率耗散):40W(在Tc=25°C时)。 - Tj(结温):150°C。 - Tstg(存储温度):-65°C至150°C。

5. 功能详解: - 该文档列出了这些晶体管在不同工作条件下的详细电气特性,包括维持电压、饱和电压、开启电压、截止电流等。

6. 应用信息: - 适用于中功率线性和开关应用,以及达林顿配置。

7. 封装信息: - 图2显示了TO-126封装的外形尺寸。
BD679A 价格&库存

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