SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BD745/A/B/C
·
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER BD745 VCBO Collector-base voltage BD745A BD745B BD745C BD745 VCEO Collector-emitter voltage BD745A BD745B BD745C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 50 70 90 110 45 60 80 100 5 20 25 7 115 3.5 150 -65~150 V A A A W V V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BD745 Collector-emitter breakdown voltage BD745A IC=30mA; IB=0 BD745B BD745C VCEsat-1 VCEsat-2 VBE -1 VBE -2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD745/A ICEO Collector cut-off current BD745B/C BD745 BD745A ICBO Collector cut-off current BD745B BD745C IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain VCE=60V; IB=0 VCE=50V; VBE=0 TC=125 VCE=70V; VBE=0 TC=125 VCE=90V; VBE=0 TC=125 VCE=110V; VBE=0 TC=125 VEB=5V; IC=0 IC=1A ; VCE=4V IC=5A ; VCE=4V IC=20A ; VCE=4V 40 20 5 IC=5 A;IB=0.5 A IC=20 A;IB=5 A IC=5A ; VCE=4V IC=20A ; VCE=4V VCE=30V; IB=0 80 100 CONDITIONS MIN 45 60 SYMBOL
BD745/A/B/C
TYP.
MAX
UNIT
V(BR)CEO
V
1.0 3.0 1.0 3.0
V V V V
0.1 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 0.5
mA
mA
mA
150
Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=5 A;IB1=-IB2=0.5 A VBE(off)=-4.2V; RL=6A tp=20µs 0.02 0.35 0.5 0.4 µs µs µs µs
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX 1.1 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD745/A/B/C
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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