BD896A

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD895A/897A/901A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD896A/898A/900A Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD896A VCBO Collector-base voltage BD898A BD900A BD896A VCEO Collector-emitter voltage BD898A BD900A VEBO IC IB Emitter-base voltage Collector current-DC Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -45 -60 -80 -5 -8 -300 70 W V A mA V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD896A V(BR)CEO Collector-emitter breakdown voltage BD898A BD900A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896A ICBO Collector cut-off current BD898A BD900A BD896A ICEO Collector cut-off current BD898A BD900A IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time IC=-4A ,IB=-16mA IC=-4A ; VCE=-3V VCB=-45V, IE=0 TC=100 VCB=-60V, IE=0 TC=100 VCB=-80V, IE=0 TC=100 VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VEB=-5V; IC=0 IC=-4A ; VCE=-3V IE=-8A IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10B;tp=20µs IC=-100mA, IB=0 CONDITIONS SYMBOL BD896A/898A/900A MIN -45 -60 -80 TYP. MAX UNIT V -2.8 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 V V mA -0.5 mA -2 750 -3.5 1 5 mA V µs µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD896A/898A/900A Fig.2 Outline dimensions 3