BD897

BD897

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BD897 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BD897 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD896/898/900/902 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD895/897/899/901 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD895 VCBO Collector-base voltage BD897 BD899 BD901 BD895 VCEO Collector-emitter voltage BD897 BD899 BD901 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current-DC Base current Total power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 45 60 80 100 5 8 300 70 2 150 -65~150 V A mA W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD895 Collector-emitter breakdown voltage BD897 IC=100mA, IB=0 BD899 BD901 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD895 BD897 ICBO Collector cut-off current BD899 BD901 BD895 BD897 ICEO Collector cut-off current BD899 BD901 IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IE=8A IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10B;tp=20µs IC=3A ,IB=12mA IC=3A ; VCE=3V VCB=45V, IE=0 TC=100 VCB=60V, IE=0 TC=100 VCB=80V, IE=0 TC=100 VCB=100V, IE=0 TC=100 VCE=30V, IB=0 VCE=30V, IB=0 CONDITIONS SYMBOL BD895/897/899/901 MIN 45 60 TYP. MAX UNIT V(BR)CEO V 80 100 2.5 2.5 0.2 2.0 0.2 2.0 0.2 2.0 0.2 2.0 mA V V 0.5 mA 2 750 3.5 1 5 mA V µs µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD895/897/899/901 Fig.2 Outline dimensions 3
BD897
1. 物料型号: - 型号:BD895/897/899/901

2. 器件简介: - 这些是硅NPN功率晶体管,采用TO-220C封装,与BD896/898/900/902型号互补,适用于达林顿应用场合,如音频设备的输出阶段、通用放大器和模拟开关应用。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:集电极,连接到安装底(Collector; connected to mounting base) - 引脚3:发射极(Emitter)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):BD895为45V,BD897为60V,BD899为80V,BD901为100V。 - VCEO(集电极-发射极电压):BD895为45V,BD897为60V,BD899为80V,BD901为100V。 - VEBO(发射极-基极电压):5V。 - Ic(集电极电流-DC):8A。 - Is(基极电流):300mA。 - PT(总功率耗散):70W(Tc=25°C)。 - TJ(结温):150°C。 - Tstg(存储温度):-65°C至150°C。

5. 功能详解: - 这些晶体管具有不同的集电极-发射极击穿电压(V(BR)CEO)和集电极-发射极饱和电压(VCEsat),以及基极-发射极导通电压(VBE)和集电极截止电流(ICBO)等特性。

6. 应用信息: - 适用于音频设备的输出阶段、通用放大器和模拟开关应用。

7. 封装信息: - 封装类型:TO-220C。 - 提供了简化外形图和符号(Fig.1)以及外形尺寸图(Fig.2)。
BD897 价格&库存

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