BD943

BD943

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BD943 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BD943 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD943 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High current capability APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 22 22 7 5 40 150 -50~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=22V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=1V IC=0.25A ; VCE=10V 85 3 MIN 22 7 TYP. BD943 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT MAX UNIT V V 0.5 1.2 50 50 475 V V µA µA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD943 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3
BD943
1. 物料型号: - 型号:BD943

2. 器件简介: - BD943是一款NPN功率晶体管,采用TO-220C封装。 - 特点包括低集电极饱和电压和高电流能力。

3. 引脚分配: - 引脚1:基极(Base) - 引脚2:集电极,连接到安装底座(Collector; connected to mounting base) - 引脚3:发射极(Emitter)

4. 参数特性: - 集电极-基极电压(VCBO):22V - 集电极-发射极电压(VCEO):22V - 发射极-基极电压(VEBO):7V - 集电极电流(Ic):5A - 集电极耗散功率(Pc):40W(在Tc=25°C时) - 结温(TJ):150°C - 存储温度(Tstg):-50°C至150°C

5. 功能详解: - 适用于中等功率的线性和开关应用。 - 集电极-发射极击穿电压(V(BR)CEO):22V(在Ic=10mA; IB=0条件下) - 发射极-基极击穿电压(V(BR)EBO):7V(在Ic=1mA; Ic=0条件下) - 集电极-发射极饱和电压(VCEsat):0.5V(在Ic=2A; IB=0.2A条件下) - 基极-发射极饱和电压(VBEsat):1.2V(在Ic=2A; IB=0.2A条件下) - 集电极截止电流(ICBO):50A(在Vcs=22V; IE=0条件下) - 发射极截止电流(IEBO):50μA(在VEB=7V; Ic=0条件下) - 直流电流增益(hFE):85至475(在Ic=0.5A; VcE=1V条件下) - 转换频率(fT):3MHz(在Ic=0.25A; VcE=10V条件下)

6. 应用信息: - 适用于中等功率的线性和开关应用。

7. 封装信息: - 封装类型:TO-220C - 提供了封装的外形尺寸图,未标注的公差为±0.10mm。
BD943 价格&库存

很抱歉,暂时无法提供与“BD943”相匹配的价格&库存,您可以联系我们找货

免费人工找货