BDT65C

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDT65C DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDT64C APPLICATIONS ·For audio output stages and general purpose amplifier and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 12 125 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Forward diode voltage Forward diode voltage Collector capacitance Turn-on time IC=5A ,IBon=-IBoff=20mA toff Turn-off time 6.0 CONDITIONS IC=30mA, IB=0 IC=5A ,IB=20mA IC=10A ,IB=100mA IC=5A ; VCE=4V VCB=120V, IE=0 VCB=60V, IE=0;Tj=150 VCE=60V, IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=5A ; VCE=4V IC=12A ; VCE=4V IF=5A IF=12A IE=0 ; VCB=10V;f=1MHz 2.0 200 1.0 1000 1000 1500 MIN 120 TYP. SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 VF-1 VF-2 CC ton BDT65C MAX UNIT V 2.0 3.0 2.5 0.4 2.0 0.2 5 V V V mA mA mA 2.0 V V pF 2.5 10 µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDT65C Fig.2 Outline dimensions 3