BDV65B

BDV65B

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BDV65B - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BDV65B 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV65/65A/65B/65C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDV65 VCBO Collector-base voltage BDV65A BDV65B BDV65C BDV65 VCEO Collector-emitter voltage BDV65A BDV65B BDV65C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 120 60 80 100 120 5 12 15 0.5 125 3.5 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDV65 Collector-emitter breakdown voltage BDV65A IC=30mA, IB=0 BDV65B BDV65C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV65 Collector cut-off current BDV65A BDV65B BDV65C BDV65 Collector cut-off current BDV65A BDV65B BDV65C IEBO hFE VEC Emitter cut-off current DC current gain Diode forward voltage IC=5A ,IB=20mA IC=5A ; VCE=4V VCB=60V, IE=0 VCB=30V, IE=0;TC=150 VCB=80V, IE=0 VCB=40V, IE=0;TC=150 VCB=100V, IE=0 VCB=50V, IE=0;TC=150 VCB=120V, IE=0 VCB=60V, IE=0;TC=150 VCE=30V, IB=0 VCE=40V, IB=0 CONDITIONS SYMBOL BDV65/65A/65B/65C MIN 60 80 TYP. MAX UNIT V(BR)CEO V 100 120 2.0 2.5 0.4 2.0 0.4 2.0 0.4 2.0 0.4 2.0 mA V V ICBO ICEO 2 VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=10A 1000 3.5 5 mA mA V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDV65/65A/65B/65C Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3
BDV65B
物料型号: - BDV65/65A/65B/65C是SavantIC Semiconductor生产的硅NPN功率晶体管。

器件简介: - 这些器件采用TO-3PN封装,是BDV64/64A/64B/64C的补充型号,属于达林顿(DARLINGTON)类型,具有高直流电流增益,适用于一般用途的放大应用。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极,连接到安装底(Collector; connected to mounting base) - 3号引脚:发射极(Emitter)

参数特性: - 绝对最大额定值(在25°C下): - 集电极-基极电压(VCBO):BDV65为60V,BDV65A为80V,BDV65B为100V,BDV65C为120V。 - 集电极-发射极电压(VCEO):BDV65为60V,BDV65A为80V,BDV65B为100V,BDV65C为120V。 - 发射极-基极电压(VEBO):5V。 - 集电极电流(Ic):12A。 - 集电极峰值电流(ICM):15A。 - 基极电流(IB):0.5A。 - 集电极功耗(Pc):在25°C下为125W。 - 结温(Tj):150°C。 - 存储温度(Tstg):-65°C至150°C。

功能详解: - 这些晶体管具有高直流电流增益,适用于一般用途的放大应用。具体特性包括集电极-发射极击穿电压、集电极-发射极饱和电压、基极-发射极导通电压、集电极截止电流、发射极截止电流和直流电流增益等。

应用信息: - 用于一般用途的放大应用。

封装信息: - 封装类型为TO-3PN,PDF中提供了简化外形图和符号,以及未标明公差的外形尺寸图。
BDV65B 价格&库存

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