BDV65C

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV65/65A/65B/65C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDV65 VCBO Collector-base voltage BDV65A BDV65B BDV65C BDV65 VCEO Collector-emitter voltage BDV65A BDV65B BDV65C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 120 60 80 100 120 5 12 15 0.5 125 3.5 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDV65 Collector-emitter breakdown voltage BDV65A IC=30mA, IB=0 BDV65B BDV65C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV65 Collector cut-off current BDV65A BDV65B BDV65C BDV65 Collector cut-off current BDV65A BDV65B BDV65C IEBO hFE VEC Emitter cut-off current DC current gain Diode forward voltage IC=5A ,IB=20mA IC=5A ; VCE=4V VCB=60V, IE=0 VCB=30V, IE=0;TC=150 VCB=80V, IE=0 VCB=40V, IE=0;TC=150 VCB=100V, IE=0 VCB=50V, IE=0;TC=150 VCB=120V, IE=0 VCB=60V, IE=0;TC=150 VCE=30V, IB=0 VCE=40V, IB=0 CONDITIONS SYMBOL BDV65/65A/65B/65C MIN 60 80 TYP. MAX UNIT V(BR)CEO V 100 120 2.0 2.5 0.4 2.0 0.4 2.0 0.4 2.0 0.4 2.0 mA V V ICBO ICEO 2 VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=10A 1000 3.5 5 mA mA V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDV65/65A/65B/65C Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3