BDV67A

BDV67A

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BDV67A - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BDV67A 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV66/66A/66B/66C/66D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in audio output stages and general amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV67/67A/67B/67C/67D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDV67 BDV67A VCBO Collector-base voltage BDV67B BDV67C BDV67D BDV67 BDV67A VCEO Collector-emitter voltage BDV67B BDV67C BDV67D VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 140 160 60 80 100 120 150 5 16 20 0.5 200 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDV67 BDV67A V(BR)CEO Collector-emitter breakdown voltage BDV67B BDV67C BDV67D VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 CC VF ton toff Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector capacitance Diode forward voltage Turn-on time Turn-off time IC=10A ,IB=40mA IC=10A ; VCE=3V IC=30mA, IB=0 SYMBOL BDV67/67A/67B/67C/67D CONDITIONS MIN 60 80 100 120 150 TYP. MAX UNIT V 2.0 2.5 1.0 4.0 1 5 3000 1000 1000 300 3.0 1.0 3.5 V V mA mA mA VCB=VCBOmax, IE=0 VCB=1/2VCBOmax; Tj=150 VCE=1/2VCEOmax, IB=0 VEB=5V; IC=0 IC=1A ; VCE=3V IC=10A ; VCE=3V IC=16A ; VCE=3V IE=0 ; VCB=10V;f=1MHz IE=10A IC = 10 A, IB1 =-IB2=40 mA VCC = 12V pF V µs µs THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base MAX 0.625 UNIT K/W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDV67/67A/67B/67C/67D Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3
BDV67A
1. 物料型号: - BDV67/67A/67B/67C/67D

2. 器件简介: - 这些是SavantIC Semiconductor生产的Silicon NPN Power Transistors,具有TO-3PN封装,是BDV66/66A/66B/66C/66D的补充型号,属于Darlington类型,具有高直流电流增益,适用于音频输出级、通用放大器和开关应用。

3. 引脚分配: - PIN 1: Base(基极) - PIN 2: Collector; connected to nu mounting base(集电极;连接到nu安装底) - PIN 3: Emitter(发射极)

4. 参数特性: - 绝对最大额定值(Tc=25°C): - VCBO(集电极-基极电压):BDV67为80V,其他型号依次增加。 - VCEO(集电极-发射极电压):BDV67为60V,其他型号依次增加。 - VEBO(发射极-基极电压):5V - Ic(集电极电流):16A - IcM(集电极峰值电流):20A - Is(基极电流):0.5A - Pc(集电极功率耗散):200W - Tj(结温):150°C - Tstg(存储温度):-65~150°C

5. 功能详解: - 包括击穿电压、饱和电压、基极-发射极电压、截止电流、直流电流增益、集电极电容、正向电压、导通时间等参数的最小值、典型值和最大值。

6. 应用信息: - 用于音频输出级和通用放大器及开关应用。

7. 封装信息: - 提供了TO-3PN封装的简化外形图和符号,以及外形尺寸图,未标明的公差为±0.1mm。
BDV67A 价格&库存

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