BDX53C

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX54/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX53/A/B/C Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX53 VCBO Collector-base voltage BDX53A BDX53B BDX53C BDX53 VCEO Collector-emitter voltage BDX53A BDX53B BDX53C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 45 60 80 100 5 8 12 0.2 60 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDX53 Collector-emitter sustaining voltage BDX53A IC=0.1A, IB=0 BDX53B BDX53C VCEsat VBE sat Collector-emitter saturation voltage Base-emitter saturation voltage BDX53 BDX53A ICBO Collector cut-off current BDX53B BDX53C BDX53 BDX53A ICEO Collector cut-off current BDX53B BDX53C IEBO hFE VF-1 VF-2 Emitter cut-off current DC current gain Forward diode voltage Forward diode voltage VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IF=3A IF=8A 750 VCB=80V, IE=0 VCB=100V, IE=0 VCE=22V, IB=0 VCE=30V, IB=0 IC=3A ,IB=12mA IC=3A ,IB=12mA VCB=45V, IE=0 VCB=60V, IE=0 80 100 CONDITIONS MIN 45 60 SYMBOL BDX53/A/B/C TYP. MAX UNIT VCEO(SUS) V 2.0 2.5 V V 0.2 mA 0.5 mA 2.0 mA 1.8 2.5 2.5 V V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX53/A/B/C Fig.2 Outline dimensions 3