BDX54

BDX54

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BDX54 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BDX54 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX53/A/B/C APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX54/A/B/C Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX54 VCBO Collector-base voltage BDX54A BDX54B BDX54C BDX54 VCEO Collector-emitter voltage BDX54A BDX54B BDX54C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -12 -0.2 60 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDX54 Collector-emitter sustaining voltage BDX54A IC=-0.1A, IB=0 BDX54B BDX54C VCEsat VBE sat Collector-emitter saturation voltage Base-emitter saturation voltage BDX54 BDX54A ICBO Collector cut-off current BDX54B BDX54C BDX54 BDX54A ICEO Collector cut-off current BDX54B BDX54C IEBO hFE VF-1 VF-2 Emitter cut-off current DC current gain Forward diode voltage Forward diode voltage VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IF=-3A IF=-8A 750 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-22V, IB=0 VCE=-30V, IB=0 IC=-3A ,IB=-12mA IC=-3A ,IB=-12mA VCB=-45V, IE=0 VCB=-60V, IE=0 -80 -100 CONDITIONS MIN -45 -60 SYMBOL BDX54/A/B/C TYP. MAX UNIT VCEO(SUS) V -2.0 -2.5 V V -0.2 mA -0.5 mA -2 mA -1.8 -2.5 -2.5 V V 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX54/A/B/C Fig.2 Outline dimensions 3
BDX54
物料型号: - BDX54/A/B/C是SavantIC Semiconductor生产的硅PNP功率晶体管。

器件简介: - BDX54/A/B/C具有TO-220C封装,高直流电流增益,达林顿结构,是BDX53/A/B/C的互补型号。 - 应用于功率线性和开关应用、锤击驱动器、音频放大器。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极,连接到安装底座(Collector; connected to mounting base) - 3号引脚:发射极(Emitter)

参数特性: - 集电极-基极电压(VCBO):BDX54为-45V,BDX54A为-60V,BDX54B为-80V,BDX54C为-100V。 - 集电极-发射极电压(VCEO):BDX54为-45V,BDX54A为-60V,BDX54B为-80V,BDX54C为-100V。 - 发射极-基极电压(VEBO):-5V。 - 集电极直流电流(Ic):-8A。 - 集电极脉冲电流(ICM):-12A。 - 基极电流(Is):-0.2A。 - 集电极功耗(Pc):60W(在Tc=25°C时)。 - 结温(TJ):150°C。 - 存储温度(Tstg):-65°C至150°C。

功能详解: - 该器件在Tj=25°C时的特性参数包括:维持电压(VCEO(SUS))、饱和电压(VCEsat)、饱和基极-发射极电压(VBE sat)、集电极截止电流(IcBO)、集电极截止电流(ICEO)、发射极截止电流(IEBO)、直流电流增益(hFE)、正向二极管电压(VF-1和VF-2)。

应用信息: - 适用于功率线性和开关应用、锤击驱动器、音频放大器。

封装信息: - 封装类型为TO-220C,文档中提供了简化外形图和符号,以及封装尺寸的图示链接。
BDX54 价格&库存

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