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BDX64C

BDX64C

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BDX64C - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BDX64C 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX64C DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX65C APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -12 -16 -0.2 117 -55~200 -55~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current Diode forward voltage DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ; IB=0;L=25mH IC=-5A ;IB=-20mA IC=-5A;VCE=-3V VCB=-120V; IE=0 TC=150 VCE=-60V; IB=0 VEB=-5V; IC=0 IF=-5A IC=-1A ; VCE=-3V IC=-5A ; VCE=-3V IC=-12A ; VCE=-3V IC=-5A ; VCE=-3V;f=1MHz 1000 MIN -120 BDX64C SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO VF hFE-1 hFE-2 hFE-3 fT TYP. MAX UNIT V -2 -2.5 -0.2 -2 -1 -5 -1.8 1500 V V mA mA mA V 750 7 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX64C Fig.2 Outline dimensions 3
BDX64C
1. 物料型号:BDX64C 2. 器件简介:BDX64C是一款SavantIC Semiconductor生产的硅PNP功率晶体管,与BDX65C型号互补。该器件设计用于功率放大和开关应用。 3. 引脚分配: - 引脚1:基极(Base) - 引脚2:发射极(Emitter) - 引脚3:集电极(Collector) 4. 参数特性: - 集电极-基极电压(VCBO):-120V,开发射极 - 集电极-发射极电压(VCEO):-120V,开基极 - 发射极-基极电压(VEBO):-5V,开集电极 - 集电极电流(Ic):-12A - 集电极峰值电流(ICM):-16A - 基极电流(IB):-0.2A - 总功率耗散(PT):117W,Tc=25°C - 结温(Tj):-55~200°C - 存储温度(Tstg):-55~200°C - 热阻(Rthjc):1.5℃/W,从结到外壳 5. 功能详解:包括维持电压、饱和电压、基极-发射极开启电压、集电极截止电流、发射极截止电流、二极管正向电压、直流电流增益、过渡频率等参数。 6. 应用信息:BDX64C适用于功率放大和开关应用。 7. 封装信息:TO-3封装,具体尺寸见图2。
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