BDX87C

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX87C DESCRIPTION ·With TO-3 package ·Complement to type BDX88C ·DARLINGTON APPLICATIONS ·Designed for use in power linear and switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Max. operating Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 12 18 0.2 120 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.45 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage DC current gain DC current gain DC current gain Collector cut-off current Collector cut-off current Emitter cut-off current Diode forward voltage Diode forward voltage CONDITIONS IC=0.1A ; IB=0 IC=6A ;IB=24mA IC=12A ;IB=120mA IC=12A ;IB=120mA IC=6A ; VCE=3V IC=5A ; VCE=3V IC=6A ; VCE=3V IC=12A ; VCE=3V VCB=100V; IE=0 TC=150 VCE=50V; IB=0 VEB=5V; IC=0 IF=3A IF=8A 1000 750 100 MIN 100 BDX87C SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE hFE-1 hFE-2 hFE-3 ICBO ICEO IEBO VF-1 VF-2 TYP. MAX UNIT V 2.0 3.0 4.0 2.8 V V V V 18000 0.5 5.0 1.0 1.0 1.8 2.5 mA mA mA V V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX87C Fig.2 Outline dimensions 3