BDY55

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·LF large signal power amplification. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 60 7 15 7 117 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=4A ;IB=0.4A IC=10A ;IB=3.3A IC=4 A; VCE=4V VCE=100V; VBE=-1.5V TC=150 VCE=30V; IB=0 VEB=7V; IC=0 IC=4A ; VCE=4V IC=10A ; VCE=4V IC=1A ; VCE=4V;f=10MHz 20 10 10 MHz MIN 60 1.1 2.5 1.8 5.0 30 0.7 5.0 70 TYP. MAX UNIT V V V V mA mA mA SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEX ICEO IEBO hFE-1 hFE-2 fT 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDY55 Fig.2 Outline dimensions 3