BU126

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU126 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter,switching mode power supply applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 750 300 3.0 6.0 2.0 40 125 -65~125 UNIT V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.5 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency Fall time CONDITIONS IC=0.1A; IB=0; IE=1mA; IC=0 IC=2.5 A;IB=0.25A IC=4 A;IB=1A IC=4A;IB=1A VCE=750V;VBE=0 Ta=125 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0; VCB=10V;f=0.5MHz IC=0.2 A ; VCE=10V IC=2.5A ;IB=0.25A 15 75 10 0.2 MIN 300 6 TYP. BU126 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICES IEBO hFE COB fT tf MAX UNIT V V 10 5.0 1.5 0.5 2 0.1 V V V mA mA pF MHz µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU126 Fig.2 Outline dimensions 3