SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU208A
DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers.
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 5 7.5 0.1 2.5 150 115 -65~150 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1. 0 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency Storage time Fall time CONDITIONS IC=0.1A; IB=0;L=25mH IE=10mA; IC=0 IC=4.5 A;IB=2 A IC=4.5 A;IB=2 A VCE=1500V;VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=15V 8 2.25 MIN 700 5
BU208A
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 COB fT ts tf
TYP.
MAX
UNIT V V
1.0 1.5 1.0 0.1
V V mA mA
125 7 10 0.7
pF MHz µs µs
IC=4.5A ;IB=1.8A LB=10µH
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU208A
Fig.2 Outline dimensions
3
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