SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2506AF
DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·Intended for use in horizontal deflection circuits of colour TV receivers
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 700 5 8 3 5 45 150 -65~150 UNIT V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
BU2506AF
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2
Collector-emitter sustaining voltage
IC=100mA ;IB=0, IE=1mA ;IC=0 IC=3A ;IB=0.79A IC=3A ;IB=0.79A VCE=RatedVCE ;VBE=0 Tj=125 VEB=7.5V; IC=0 IC=0.3A ; VCE=5V IC=3A ; VCE=5V
700
V
Emitter-base breakdown voltage
7.5
V
Collector-emitter saturation voltage
5.0
V
Base-emitter saturation voltage
1.1 1.0 2.0 0.1
V
Collector cut-off current
mA
Emitter cut-off current
mA
DC current gain
12
DC current gain
3.8
5.5
7.5
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2506AF
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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