BU2506DX

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2506DX DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 7.5 5 8 3 5 45 150 -55~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=3.0A ;IB=0.79 A IC=3.0A ;IB=0.79 A VCE=BVCES; VBE=0 TC=125 VEB=7.5V; IC=0 IC=0.3 A ; VCE=5V IC=3.0A ; VCE=5V IF=3.0A VCB=10V;IE=0;f=1.0MHz 3.8 MIN 700 7.5 BU2506DX SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC TYP. MAX UNIT V V 5.0 1.1 1.0 2.0 136 12 5.5 1.6 47 7.5 2.0 V V mA mA V pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2506DX Fig.2 Outline dimensions 3