BU2507AF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2507AF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers and computer monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 8 15 4 6 45 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2507AF SYMBOL TYP. MAX UNIT VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 CC Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH IB=1mA ;IC=0 IC=4A ;IB=0.8 A IC=4A ;IB=0.8 A VCE=BVCES; VBE=0 TC=125 VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=4A ; VCE=5V f=1MHz;VCB=10V 700 V Emitter-base breakdown voltage 7.5 13.5 V Collector-emitter saturation voltage 5.0 V Base-mitter saturation voltage 1.1 1.0 2.0 1.0 V Collector cut-off current mA Emitter cut-off current mA DC current gain 17 DC current gain 5 7 9 Collector output capacitance 68 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2507AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3