BU2515AF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2515AF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of PC monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7.5 9 20 5 7.5 45 150 -55~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2515AF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 700 V VEBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.9A 5.0 V VBEsat Emitter-base saturation voltage IC=4.5A ;IB=0.9A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 1.0 1.0 2.0 1.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=0.5A ; VCE=5V 17.2 hFE-2 DC current gain IC=4.5A ; VCE=5V 5 10.8 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2515AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3