BU2515DF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2515DF DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of PC monitors. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base Collector current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 9 20 5 7.5 45 150 -55~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2515DF SYMBOL TYP. MAX UNIT V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF Emitter-base breakdown voltage IB=600mA ;IC=0 IC=4.5A ;IB=0.9A IC=4.5A ;IB=0.9A VCE=BVCES; VBE=0 Tj=125 VEB=6V; IC=0 IC=1.0A ; VCE=5V IC=4.5A ; VCE=5V IF=4.5A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.0 1.0 2.0 130 V Collector cut-off current mA Emitter cut-off current mA DC current gain 13 DC current gain 5 8 10.2 Diode forward voltage 2.2 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2515DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3