BU2520D

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520D DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current(DC) Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 10 25 6 9 125 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520D CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IB=600mA; IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCE=ratedVCE; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IF=6A IE=0 ;VCB=10V;f=1MHz 115 5 7 100 MIN 800 7.5 13.5 5.0 1.3 1.0 2.0 300 23 10 2.2 V pF TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520D Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3