BU2522AF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2522AF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current-peak Base Collector current (DC) Base current-peak Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 800 10 25 6 9 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector capacitance CONDITIONS IC=0.1A ;IB=0;L=25mH IE=1mA ;IC=0 IC=6.0A ;IB=1.2A IC=6.0A ;IB=1.2A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IE=0 ; VCB=10V; f=1MHz 5 MIN 800 7.5 BU2522AF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 CC TYP. MAX UNIT V 13.5 5.0 1.3 0.25 2.0 0.1 10 7 115 8 V V V mA mA pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2522AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3