BU2525DF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2525DF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 UNIT V V A A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=8A ;IB=1.6 A IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 Tj=125 VEB=6V; IC=0 IC=1.0A ; VCE=5V IC=8A ; VCE=5V IF=8A IE=0, f=1MHz;VCB=10V 5 72 MIN 800 7.5 BU2525DF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC TYP. MAX UNIT V 13.5 5.0 1.1 1.0 2.0 110 11 7 1.6 145 9.5 2.0 218 V V V mA mA V pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2525DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3