BU2525DX

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2525DX DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen color TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7.5 12 30 8 12 45 150 -55~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2525DX SYMBOL TYP. MAX UNIT VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=8A ;IB=1.6 A IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 TC=125 VEB=6V; IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V IF=8A IE=0 ; VCB=10V;f=1MHz 800 V Emitter-base breakdown voltage 7.5 13.5 V Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.1 1.0 2.0 72 110 218 V Collector cut-off current mA Emitter cut-off current mA DC current gain 11 DC current gain 5 7 9.5 Diode forward voltage 1.6 2.0 V Collector capacitance 145 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2525DX Fig.2 Outline dimensions 3