BU2527DX

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2527DX DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2527DX SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6A VCE=BVCES; VBE=0 Tj=125 VEB=6V; IC=0 110 1.1 1.0 2.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 11 hFE-2 DC current gain IC=8A ; VCE=5V 5 10 VF Diode forward voltage IF=8A 2.0 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2527DX Fig.2 Outline dimensions 3