BU2722AF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2722AF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 825 7.5 10 25 10 14 45 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU2722AF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=1.0A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 1.0 1.0 2.0 1.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=0.1A ; VCE=5V 22 hFE-2 DC current gain IC=4.5A ; VCE=1V 4.5 10 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2722AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3