BU2727DF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2727DF DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 825 7.5 12 30 12 25 45 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=5A ;IB=0.91A IC=5A;IB=0.91A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=1V IF=7A 6 5.5 MIN 825 7.5 BU2727DF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF TYP. MAX UNIT V 13.5 1.0 1.0 1.0 2.0 110 V V V mA mA 11 2.2 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2727DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3