BU326A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A DESCRIPTION ·With TO-3 package ·High voltage;high speed ·Low collector saturation voltage. APPLICATIONS ·Intended for operating in CTV receiver’s chopper supplies. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER BU326 VCBO Collector-base voltage BU326A BU326 VCEO Collector-emitter voltage BU326A VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 400 10 6 8 3 75 -65~200 -65~200 V A A A W Open emitter 900 375 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.33 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BU326 IC=0.1A; IB=0 BU326A IC=2.5 A;IB=0.5A IC=4A;IB=1.25 A IC=2.5 A;IB=0.5A IC=4A;IB=1.25 A VCE=800V;VBE=0 1 BU326A IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VCE=900V;VBE=0 VEB=10V; IC=0 IC=1A ; VCE=5V IC=0.2A ; VCE=10V; f=1MHz 4.0 25 MHz 10 mA mA 400 1.5 3.0 1.4 1.6 V V V V CONDITIONS MIN 375 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage BU326 ICES Collector cut-off current Switching times ton ts tf Turn-on time Storage time Fall time IC=2.5A ; IB1=0.5A;IB2=-1A VCC=250V ; 0.5 3.5 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU326 BU326A Fig.2 Outline dimensions 3