BU407

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU406 BU407 DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BU406 Collector-base voltage BU407 BU406 VCEO VEBO IC ICM IB Ptot Tj Tstg Collector-emitter voltage BU407 Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 150 6 7 10 4 60 150 -65~150 V A A A W Open emitter 330 200 V CONDITIONS VALUE 400 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BU406 IC=100mA ; IB=0 BU407 IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCE=400V; VBE=0 150 CONDITIONS MIN 200 BU406 BU407 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage BU406 1.0 1.2 V V ICES Collector cut-off current BU407 VCE=330V; VBE=0 VEB=6.0V; IC=0 IC=2A ; VCE=5V IC=0.5A ;VCE=10V;f=1.0MHz IE=0 ;VCB=10V;f=1.0MHz IC=5A ;VCC=40V IB1 =-IB2=0.6A;L=150µH 40 10 80 5 mA IEBO hFE fT COB tf Emitter cut-off current DC current gain Transition frequency Output capacitance Fall time 1.0 120 mA MHz pF 0.75 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU406 BU407 Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU406 BU407 4