BU408

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU408 DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching speed APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 400 200 6 7 10 4 60 150 -55-150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU408 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) VCEsat VBEsat hFE ICES IEBO fT toff Collector-emitter sustaining voltage IC=100mA ; IB=0 IC=6A; IB=1.2A IC=6A; IB=1.2A IC=2A ; VCE=5V VCE=250V; VBE=0 TC=150 VEB=6V; IC=0 IC=0.5A ; VCE=10V IC=6A ; IB=1.2A 200 V Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage 1.5 V DC current gain 40 0.1 1.0 1 Collector cut-off current mA Emitter cut-off current mA Transition frequency 10 MHz Turn-off time 0.4 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU408 Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3