BU4508DF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU4508DF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current-peak Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 800 8 15 4 6 45 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU4508DF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 3 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A VCE=BVCES; VBE=0 TC=125 IC=0.5A ; VCE=5V 7 1.03 1.0 2.0 V ICES Collector cut-off current mA hFE-1 DC current gain hFE-2 DC current gain IC=5A ; VCE=5V 4.2 7.3 VF Diode forward voltage IF=5A 2.2 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU4508DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3