BU506D

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching speed ·Built-in damper diode APPLICATIONS ·Horizontal deflection circuits of colour TV receivers. ·Line-operated switch-mode applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BU506D Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Base current(peak) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 6 5 8 3 5 100 150 -65-150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU506D CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Diode forward voltage CONDITIONS IC=100mA; IB=0; L=25mH IC=3A; IB=1.33A IC=3A; IB=1.33A IC=0.1A ; VCE=5V VCE=rated; VBE=0 TC=125 VEB=6V; IC=0 IF=3A; 1.5 6 13 MIN 700 1.0 1.3 30 0.5 1.0 200 2.2 mA mA V TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat hFE ICES IEBO VF Switching times ts tf Storage time Fall time 6.5 0.7 µs µs ICM = 3 A; IB(end) = 1A LB = 12µH 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU506D Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3