BU508AF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7.5 8 15 4 6 34 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=4.5A; IB=1.6A IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125 VEB=6V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 6 MIN 700 7.5 BU508AF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE fT COB TYP. MAX UNIT V 13.5 1.0 1.1 1.0 2.0 10 30 7 125 V V V mA mA MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3