BU508AFI

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508AFI DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 50 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Transition frequency Storage time Fall time CONDITIONS IC=100mA ;IB=0, IE=10mA ;IC=0 IC=4.5A ;IB=2 A IC=4.5A ;IB=2 A IC=1A; VCE=5V VCE=1500V; VBE=0 TC=125 VEB=5V; IC=0 IC=0.1A; VCE=5V;f=5MHz 8 MIN 700 10 BU508AFI SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat hFE ICES IEBO fT ts tf TYP. MAX UNIT V V 1.0 1.3 V V 1.0 2.0 0.1 7 7 0.55 mA mA MHz µs µs IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3µH 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508AFI Fig.2 Outline dimensions 3