BU508D

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508D DESCRIPTION ·With TO-3PN package ·High voltage ·Built-in damper diode APPLICATIONS ·For use in large screen colour deflection circuits. PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 5 8 2.5 125 150 -65-150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508D CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Diode forward voltage Transition frequency Collector capacitance Storage time IC=4.5A ; IB=1.4A LB=10µH Fall time 1.0 µs CONDITIONS IC=100mA; IB=0 IC=4.5A; IB=2.0A IC=4.5A; IB=2.0A IC=1A ; VCE=5V VCE=1500V; VBE=0 VEB=5V; IC=0 IF=4.0A IC=0.1A ; VCE=5V IE=0;VCB=10V;f=1MHz 4 125 7 8 1.0 300 2.0 mA mA V MHz pF µs MIN 700 1.0 1.5 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat hFE ICES IEBO VF fT Cob ts tf 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508D Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3