BU508DF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 8 15 4 6 34 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BU508DF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH IC=4.5A; IB=1.6A IC=4.5A ;IB=2A VEB=5V; IC=0 VCB=BVCBO IE=0 TC=125 IC=0.5A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IF=4.5A 700 V VCE(sat) VBE(sat) IEBO ICES hFE fT COB VF Collector-emitter saturation voltage 1.0 V Base-emitter saturation voltage 1.1 V Emitter cut-off current 300 1.0 2.0 10 30 mA Collector cut-off current mA DC current gain Transition frequency 7 MHz Output capacitance 125 pF Diode forward voltage 1.6 2.0 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3