BU911

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU911 DESCRIPTION ·With TO-220C package ·DARLINGTON APPLICATIONS ·Solenoid and relay drivers ·Motor control ·Electronic automotive ignition PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 450 400 5 6 10 1 60 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 2.08 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. BU911 SYMBOL MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES ICEO IEBO hFE VF Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH IC=2.5A ;IB=50mA IC=4A ;IB=200mA IC=2.5A ;IB=50mA IC=4A ;IB=200mA VCE =450V; VBE=0; TC=125 VCE =400V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=5V IF=4A 400 V Collector-emitter saturation voltage 1.8 V Collector-emitter saturation voltage 1.8 V Base-emitter saturation voltage 2.2 V Base-emitter saturation voltage 2.5 1.0 5.0 1.0 V Collector cut-off current mA Collector cut-off current mA Emitter cut-off current 5 mA DC current gain 500 Diode forward voltage 2.5 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU911 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3