BU921

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU921 DESCRIPTION ·With TO-3 package ·High current;high voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 450 400 5 10 15 5 120 175 -65~175 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.25 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=0.1A; IB=0 IC=5A;IB=50mA IC=7 A;IB=140mA IC=5A;IB=50mA IC=7 A;IB=140mA VCE=450V;VBE=0 TC=150 VCE=400V;IB=0 VEB=5V; IC=0 IC=2A; VEB=2V IF=7A 500 MIN 400 TYP. BU921 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES ICEO IEBO hFE VF MAX UNIT V 1.8 1.8 2.2 2.5 0.25 0.50 0.25 50 V V V V mA mA mA 2.5 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU921 Fig.2 Outline dimensions 3