BU931Z

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931Z DESCRIPTION ·With TO-3 package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·Application in high performance electronic car ignition PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 350 350 5 20 5 175 200 -40~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACT ERISTICS Tj=25 unless otherwise specified PARAMETER Clamping voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Clamping current Collector-emitter off state current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=0.1 A ;IB=0 IC=7A ;IB=70mA IC=8A; IB=100m A IC=10A; IB=150m A IC=8A; IB=100m A IC=10A; IB=250m A IC=5A ; VCE=2V IC=10A ; VCE=2V VCE =350V; IB=0 VCC =16V; VBE=300mV Tj=125 VEB=5V; IC=0 IC=5A ; VCE=2V IF=10A 300 1.67 2.0 MIN 350 TYP. BU931Z SYMBOL VCL VCE(sat-1) VCE(sat-2) VCE(sat-3) VBE(sat-1) VBE(sat-2) VBE-1 VBE-2 ICL ICE(off) IEBO hFE VF MAX 500 1.6 1.8 2.0 2.2 2.5 UNIT V V V V V V V V 0.25 0.5 50 mA mA mA 2.5 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU931Z Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3