BUH515

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH515 DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·Horizontal deflection for color TV and monitors. ·Switch mode power supplies. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Operating junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 12 5 8 50 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1500V; VBE=0 Tj=125 VEB=5V; IC=0 IC=5A ; VCE=5V 6 MIN 700 10 BUH515 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE TYP. MAX UNIT V V 1.5 1.3 0.2 2 100 12 V V mA µA Switching times ts tf Storage time IC=5A;IB1=1.25A;IB2=2.5A; VCC=400V Fall time 190 280 ns 2.7 3.9 µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH515 Fig.2 Outline dimensions 3