BUH515D

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH515D DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen color TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 5 8 50 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1300V; VBE=0 VCE=1500V; VBE=0 Tj=125 VEB=5V; IC=0 IC=5A ; VCE=5V IF=5A 5 MIN BUH515D SYMBOL VCEsat VBEsat ICES-1 ICES-2 IEBO hFE VF TYP. MAX 1.5 1.3 10 0.2 2 200 10 2 UNIT V V µA mA mA V Switching times ts tf Storage time IC=5A;IB1=1.5A;-IB2=2.5A; VCC=400V Fall time 170 260 ns 2.4 3.6 µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH515D Fig.2 Outline dimensions 3