BUJ403A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage,high speed APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications, converters,inverters,switching regulators, motor control systems,etc PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUJ403A Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Max.operating junction temperature Storage temperature Tmb125 CONDITIONS Open emitter Open base Open collector VALUE 1200 550 7 6 10 3 5 100 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction mounting base MAX 1.25 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain CONDITIONS IC=10mA ;IB=0;L=25mH IC=2A ;IB=0.4 A IC=2A ;IB=0.4 A VCE =550V; IB=0; VCE =VCESMmax; VBE=0; Tj=125 VEB=7V; IC=0 IC=1mA;VCE=5V IC=500mA;VCE=5V IC=2A;VCE=5V IC=3A;VCE=5V 13 20 13 MIN 550 BUJ403A SYMBOL VCEO(SUS) VCEsat VBEsat ICEO ICES IEBO hFE-1 hFE-2 hFEsat-1 hFEsat-2 TYP. MAX UNIT V 0.15 0.91 1.0 1.5 0.1 1.0 2.0 0.1 V V mA mA mA 47 25 15.5 Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=2.5A; IB1=-IB2=0.5 A RL=75D,VBB2=4V 0.5 3.0 0.3 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUJ403A Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3