BUL56B

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUL56B DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN 1 2 3 Base Collector;connected to mounting base emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Operating and storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 250 100 10 18 25 5 85 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=1A ;IB=0.1A IC=7A ;IB=0.7A IC=12A; IB=1.2A IC=7A; IB=0.7A IC=12A; IB=1.2A VCB=250V; IE=0 TC=125 VCE=90V ;IB=0 VEB=9V; IC=0 TC=125 IC=0.3A ; VCE=5V IC=5A ; VCE=5V IC=12A ; VCE=1V IC=0.2A ; VCE=4V VCB=100V ;f=1MHz 30 25 5 20 100 MIN 100 250 10 TYP. BUL56B SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 fT Cob MAX UNIT V V V 0.2 0.6 1.2 1.2 1.8 10 100 100 10 100 90 60 V V V V V µA µA µA MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUL56B Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3