BUT11AX

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION BUT11AX Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1000 450 9 5 10 2 4 32 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 3.95 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A; IB=0;L=25mH IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A VCE=Rated VCES ;VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V 10 10 MIN 450 BUT11AX SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.5 1.3 1.0 2.0 10 35 35 V V mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=2.5A; IB1=- IB2=0.5A 0.6 3.5 0.6 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT11AX Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3