SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BUT18 BUT18A
Absolute maximum ratings (Tc=25 )
SYMBOL PARAMETER BUT18 VCBO Collector-base voltage BUT18A BUT18 VCEO Collector-emitter voltage BUT18A VEBO IC ICM IB IBM Ptot Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 9 6 12 3 6 110 150 -65~150 V A A A A W Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUT18 IC=0.1A; IB=0;L=25mH BUT18A IC=4A; IB=0.8A IC=4A; IB=0.8A VCE=850V ;VBE=0 Tj=125 VCE=1000V ;VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=1A ; VCE=5V CONDITIONS
BUT18 BUT18A
SYMBOL
MIN 400
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V 450 1.5 1.3 1.0 2.0 1.0 2.0 10 10 10 35 35 V V
VCEsat VBEsat
Collector-emitter saturation voltage Base-emitter saturation voltage BUT18 BUT18A
ICES
Collector cut-off current
mA
IEBO hFE-1 hFE-2
Emitter cut-off current DC current gain DC current gain
mA
Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=4A; IB1=-IB2=0.8A VCC=250V 1.0 4.0 0.8 µs µs µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUT18 BUT18A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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